摘要
Ｓｉ衬底上生长的Ｃｏ薄膜，经２５０，４５０，５００℃退火后．用电子显微镜对Ｃｏ／Ｓｉ界面处ＣｏＳｉ化合物的相转变进行了观察结果发现ＣｏＳｉ为多晶颗粒．
TEM observation was carried out on the phase transformation of CoSi along Co/ Si interface of the film grown on the Si substrate annealed at 250, 450 or 500℃respectively. CoSi is found to be the polycrystalline grains and no epitaxial relationship occurred between Si substrate and CoSi. The sequence of phase transformation for Co/Si interface in the annealing temperature range may be:250-450℃ 450-500℃Co2Si+ CoSi─→ CoSi─→CoSi+CoSi2(
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第4期B179-B182,共4页
Acta Metallurgica Sinica
