室温低压下脉冲等离子体生长立方氮化硼薄膜

PULSED PLASMA PRODUCTION OF c-BN THIN FILMS AT ROOM TEMPERATURE AND LOW PRESSURE

运用脉冲高能量密度等离子体，在室温下制成立方氮化硼薄膜．沉积薄膜的衬底材料分别选用单晶硅、氯化钠和ＧＣｒ１５轴承钢，用扫描电镜、透射电镜、红外吸收谱仪、扫描Ａｕｇｅｒ微探针等对沉积的薄膜进行了分析与测试，结果表明，氮化硼薄膜的结构及性质强烈地依赖于实验条件．分析表明立方氮化硼晶核的形成与衬底材料关系不大，但晶核的生长则部分地依赖于衬底．

Using pulsed plasma technique the cubic boron nitride thin films has been produced on the single silicon,NaCl or GCr15 bearing steel substrate at room temperatureand low pressure.The SEM,TEM,IR,AES,microhardness tester and scratching tester were used to examine the properties and structure of boron nitride thin films on the surface of various substrates.The results show that the structure of BN thin films strongly depends on the experimental conditions, the formation of the nuclei has no relationship with substrate materials,but growth of the nuclei depends on the substrate partly.