摘要
目的比较514nm氩离子激光、532nm倍频激光、810nm半导体激光视网膜光凝斑的组织学改变。方法青紫蓝兔72只,随机分组后分别行514nm氩离子激光、532nm倍频激光和810nm半导体激光的视网膜光凝。于光凝后不同时间段,在光镜和透射电镜下观察、比较三种激光对视网膜和脉络膜造成的组织学改变。结果三种激光能产生相同的视网膜组织学改变,但能量要求不一。光凝早期,810nm半导体激光对脉络膜影响较其他两种激光为甚;光凝后3月,当810nm半导体激光光凝损害仅达视网膜外层(外核层)时,其脉络膜组织学改变可完全恢复,与其他两种激光无明显差异。结论远期观察表明在达到临床治疗要求的能量水平上,三种激光对视网膜内层及深层脉络膜的影响无明显差异。
Objective To compare histological alterations of retinal spots produced by argon laser, frequency doubled laser and semiconduct laser. Methods Retinal photocoagulation by semiconduct laser,frequency doubled laser and argon laser were performed on 72 pigmental rabbits. According to different times, retinal and choroid alterations were observed and compared using optical microscopy and transmission electronic microscope. Results Three kinds of lasers can lead to the same histological alterations with different energy. In early stage, the alteration of choroid produced by semiconduct laser was more serious than that by the other two lasers, With observation for a longer time(three months) ,changes of the choroid could recover completely, and there was no obvious histopatholigic difference from the other two lasers. Conclusion For longer observation, there is no obvious difference in the inner retina and choroid among the three kinds of lasers when the leision is limited to the outer retina ( defect of outer nuclear layer) clinically.
出处
《上海第二医科大学学报》
CSCD
北大核心
2005年第8期819-822,共4页
Acta Universitatis Medicinalis Secondae Shanghai
关键词
半导体激光
氩激光
倍频激光
组织学改变
semiconduct laser
frequency-doubled laser
argon laser photocoagulation
histology alteration