a－Si：H和a－SiC：H薄膜掺杂效率的研究

Studies on the Doping Efficiency of a-Si : H and a-SiC : H Films

本文通过测量掺杂ａ－Ｓｉ：Ｈ和ａ－Ｓｉｃ：Ｈ薄膜的电导率随退火温度和退火时间变化研究了温度对掺杂效率的影响以及杂质激活的微观过程。结果表明，（１）杂质激活过程是伸展指数形式，（２）在低温区掺杂效率正比于，（３）在高温区掺杂效率达到一饱和值。通过一个与氢运动有关的杂质激活模型，我们解释了上述实验结果。

By measuring the annealing temperature and annealing time dependences of the dark conductivities of doped a-Si : H and a-SiC : H films, we have investigated the infiuences of annealing temperature on the doping efficiency and on the reactivation process of the dopant. The results show that : (1)the dopant reactivation process exhibits a stretched expomemtoal form, (2) in the low temperature region, with the increase of annealing temperature,the doping efficiency ( η ) increases, ( η/ηRT ) is proportional to e-E/kT, (3) in high temperature region, the η/ηRT depends on the doping levels and saturates at high temperature. With a hydrogen related dopant reactiveation model we have explored the reactivation mechanism and explained the annealing behavior of the films.