静电感应晶闸管（SITH）沟道势垒的分析

The Numerical Analysis on Channel Potential Barrier of Static-Inductio Thyristor(SITH)

首先对ＳＩＴＨ通态和阻断态的Ｉ－Ｖ特性给出了物理考察和解释，然后在解析方法所得沟道电势分布表达的基础上，用有限差分法和迭代法精确地求解了沟道电势，得到了马鞍状的势分布，进而研究了沟道势垒随偏压的变化。

A physical explanation of the I - V characteristics, including the on-state and offstate SITH is given. The potential distributions of the channel of SITH are obtained by using analytic method. Based on the analytic theory, numerical calculations for SITH were done by computer. The three dimensional distributions of potential in blocking state were computed by finite-difference method. Its profile resembles a saddle, and there is a minimum value along the channel axis, which is called 'saddle-point', This result indicates that the distribution has a potential barrier. The gate bias sensitive controls the on-off performance of the device by modulating barrier vanishing and appearing. The results we obtained make the mechanism of SITH more comprehensive,and give us a foundation in designing and fabricating SITH.