摘要
用正电子湮没技术,研究了半绝缘(SI)和掺Te的n型GaAs的退火行为及外延工艺的影响.结果表明,GaAs的平均寿命τ_M,长寿命τ_2,和基块寿命τ_b依赖于掺杂,同时τ_2的变化与镓空位和多镓空位均有关.外延后,由于退火的效果,I_2的降低和τ_2的增加是明显的.文中还讨论了电子和中子辐照的影响.
Using the positron annihilation technique, the annealing behavior and the effects of epi-taxy process for SI-GaAs and n-GaAs:Te have been studied.The results show that themean lifetime τ_M,the long lifetime τ_2 and the bulk lifetime τ_b of GaAs depend upon doping,as well as the changes of τ_2 are related to both Ga-vacancy and multi-Ga-vacancy.Afterepitaxy process, the decrease in the values of I_2 and the increase in the values of τ_2 are ob-vious.The influence of electron and neutroa irradiation has also been discussed.
关键词
GAAS
正电子湮没
寿命
GaAs
Positron annihilation technique
Long lifetime component
Mean li-fetime
Bulk lfetime vacancy type defects
Muulti-Ga-vacancy