摘要
本文报道了以升华-蒸馏法提纯碘化汞的结果。用纯化后的原料长出碘化汞单晶体,对晶体的性能进行了观测,表明采用这种方法所获得的原料适用于生长低位错密度的优质的碘化汞大单晶体,是一种行之有效的提纯方法。
The purification results of HgI_2 starting materials by sublimation- distillation method are reported.The characterizations of the single crystals grown by using the purified materials show that this method is effective for purifing HgI_2.The HgI_2 purified by this technique can be used for growing large and high quality single crystals of HgI_2 with lower dislocation density。
出处
《人工晶体学报》
EI
CAS
CSCD
1995年第3期227-231,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金
关键词
碘化汞
提纯
蒸馏
半导体材料
单晶生长
原料
HgI_2
purification
sublimation
distillation
semiconductor materials