新型高效闪烁晶体Ce：Gd_2SiO_5的生长

Growth of a Promising New Scintillator Ce:Gd_2SiO_5

掺Ｃｅ硅酸钆（Ｃｅ：Ｇｄ＿２ＳｉＯ＿５）晶体具有发光效率高，响应速度快、不潮解、抗辐照和耐高温等优异性能，是一种综合性能好，具有实际应用价值的闪烁晶体。本文用中频感应提拉法生长出尺寸为Φ２８ｘ８０ｍｍ的无色、透明的高质量Ｃｅ：ＧｄＳｉＯ＿５晶体。选择合适的工艺参数，消除晶体的解理开裂是生长的关键。其荧光发射峰对应于Ｃｅ￣（３＋）的５ｄ能级￣２Ｔ＿２和４ｆ能级￣２Ｆ＿（７／２）和￣２Ｆ＿（５／２）间跃迁，最强峰位于４３１ｎｍ。

Ce-doped Gd_2SiO_5(GSO:Ce)is a promising scintillation crystal with superior properties for the practical use. GSO:Ce is a typical fast, high density,nonhydroscopic,radiation hardness material.Clearness and transparent crystals of Ce:GSO with size of Φ28x80mm has been grown by Czochralski method.A suitable technique of growth is selected to eleminate the cleavage and cracking of GSO:Ce crystals.The emission spectrum of the crystal is decomposed into two bands corresponding to the transitions from Ce￣(3+) 5d￣2 T_2 to two 4f levels of ￣2F_(7/2) and ￣2F_(5/2).