Monte　Carlo方法模拟背散射电子固体表面空间分布

SIMULATING THE SPATIAL DISTRIBUTION OF THE BACKSCATTER ELECTRON ON SOLID SURFACE BY MONTE-CARLO METHOD

应用ＭｏｎｔｅＣａｒｌｏ方法模拟低能电子在固体中的散射过程；电子的弹性散射用较严格的Ｍｏｔｔ截面计算；非弹性散射分为等离子激发、导带电子激发及壳层电子激发并由Ｑｕｉｎｎ，Ｓｔｒｅｉｔｗｏｌｆ及Ｇｒｙｚｉｎｓｋｉ的截面描述．对不同能量低能电子作用下不同元素固体中背散射电子、低能损背散射电子表面空间分布作了计算，结果表明低能损背散射电子具有较好的空间分辨率，这对改善背散射电子图象以及电子束曝光检测技术较有意义．

Monte Carlo simulation of low-energy electron scattering in Al, Cu,An targets has been pro formed, based on Mott cross section for elastic scattering, and Quinn, Streitwolf and Gryzinski's cross sections for inelastic scattering, such as plasma excitation, conduction electron excitation and shell electron excitation, calculates the spatial distribution of both the backscatter electrons and low-loss backscatter electrons for different elemental solids. The results show that a higher resolution can be obtained with low-loss backscatter electrons, which is very significant for improving the resolution of the backscatter electrons image and electron beam lithography detection technology.