单片集成InGaAs PIN-JFET光接收器的设计与研制

Design and Fabrication of Monolithically Integrated InGaAs PIN-JFET Photoreceivers

本文报告了一种OEIC器件:单片集成InGaAs PIN-JFET光接收器的设计与研制结果.为解决光电器件与电子器件在集成上的兼容性,采用了在结构衬底上进行平面化外延的新工艺,达到了器件的准平面结构,并对器件的主要参数进行了计算,选取了较佳的载流子浓度.制成的单片集成器件中,PIN光探测器的量子效率在1.3μm处为57％,暗电流在-5V下小于100nA,JFET的跨导为34ms/mm,与计算植相符.对器件进行光接收功能测试获得了预期的结果.

An OEIC device:monolithically integrated InGaAs PIN-JFET photoreceiver has been de-signed and fabricated.For the compatible quasi-planar integration of optoelectronic devicewith electronic device,a new process has been developed for the planing LPE growth on struc-tured substrate.Main device characteristics have been calculated for the optimization of thecarrier concentration.The quantum efficiency of the PIN photodetector is 57% at 1.3μm,its dark current is less than 100 nA at-5 V.JFET's transconductance is 34 ms/mm at 4 μm.gate lenth,that conforms to tthe calculated value.The function of integrated photoreceiverhas been demonstrated.