一种亚微米垂直硅墙的刻蚀方法

A Method of Etching Submicron Vertical Silicon Screen

亚微米垂直硅墙的制备是垂直硅薄膜耦合约瑟夫逊结的关键工艺.本文作者在普通光刻设备基础上,开发了一种在〈100〉硅片上制备亚微米硅墙的刻蚀方法:首先用普通光刻手段刻出较宽的墙区;其次,对非墙区进行迭加注入掺杂;第三,杂质高温横向扩散,第四,掺杂选择性刻蚀;第五,高温氧化减薄.实验结果表明,这种方法可以获得墙宽为0.29μm,墙高为1μm左右的硅墙,而且还有一定的改进潜力.

The fabrication of submicron vertical silicon screen is a key step for fabricating Josephsonjunction coupled by vertical silicon membrane.Based on common photoetching equipment,authorsof the paper developed a method of fabricating submicron silicon screen on <100> silicon dices:first,photoetching wider district of silicon screen;second, multi-implantation doping with dif-ferent energies into the district out of the screen;third, horizontal impurity diffusing under hightemperatures;forth,etching doped district only;and finally,thinning the screen by means ofoxidizing under high temperature.Our experimental results show that the method can be usedto fabricate a silicon screen with 0.29μm thick and about 1 μm high and it can still go a stepfurther.