摘要
本文用自制的磁控反应离子刻蚀设备研究了磁场对反应离子刻蚀速率的影响.实验结果表明,磁场的引入使反应离子刻蚀速率明显提高.与不加磁场相比,加磁场后刻蚀速率可提高6-10倍.
SiO_2 etching characteristics have been investigated by use of our magnetron reactive ionetching experimental apparatus Under the condition of magnetron discharge the etch rate ofSiO_2 is increased by 6 to 10 times employing CHF_3 In the mean while,the plasma selfbias vol-tage is reduced to one half.
