摘要
本文利用椭偏光谱法测量了能量为200keV、剂量为2×10^(18)cm^(-2)的^(16)O^+注入Si以及退火样品.应用多层介质膜模型和有效介质近似,分析了这些样品的SIMOX结构的各层厚度以及各层中的主要组份.提出了从椭偏谱粗略估算表层Si及埋层SiO_2厚度的简单方法.研究结果表明,这种条件下的O^+注入Si可以形成SIMOX结构,经高温退火后,表层Si是较完整的单晶层,埋层SiO_2基本没有Si聚积物.椭偏谱的结果与背散射、扩展电阻测量和红外吸收光谱等结果作了比较.
Spectroellipsometry in visible-uv region (2.0-4.4eV) has been used to investigate thesilicon-on-insulator(SOI) structures formed by oxygen ion implanted into silicon at an energyof 200 keV and a dose of 2×10^(18)cm^(-2), and into the corresponding annealed samples. Usinga multilayer model and the Bruggeman effective medium approximation,we have analysedthe thicknesses and compositions of the SOI structures.We have also presented a simlpleequation to estimate the thicknesses of the SOI structure.Having been compared with theresults determined by the Rutherford backscattering,spreading resistance probe and infraredabsorption measurements,our experiment results show that,after high temperature annealing,the top layer of the SOI structure is close to a neurly perfect single crystal of silicon and theburied SiO_2 is in a disorder phase.
基金
国家教委博士点基金
关键词
椭偏光法
离子注入
SOI结构
硅
Ellipsometry
SOI structure
SIMOX structure
Multilayer moded
Effective medium approximation
Ion implantation
