摘要
本文研究了常规热丝CVD法生长的金刚石薄膜的绝缘电阻特性,发现薄膜从反应室取出后其电阻会随时间降低至某一稳定值(时间效应).用浓硫酸和双氧水的混合液、或氩等离子体对薄膜进行表面处理,可以提高电阻5~6个数量级,且不再随时间变化;而氩气气氛下的加热处理效果不大.文中还提出了产生电阻时间效应的原因和提高薄膜绝缘电阻的方法.
The dielectric resistance of diamond films grown with the normal hot-filamentchemical vapour deposition method was investigated. It was found that the film resistancedecreased to a definite value with time when it was taken out from the reaction chamber(time effect). The surface treatment of the mixing solution of H2SO4+H2O2 or of argon microwave plasma can raise film resistance to 5 or 6 orders of magnitude, and then the resistance keeps stable with time. However, the annealing in argon has little effect on film resistance. The mechanism of time effect of resistance is discussed in this paper.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
1995年第4期167-170,共4页
Journal of Shanghai Jiaotong University
关键词
金刚石薄膜
电阻
时间效应
表面处理
diamong films, resistance, time effect, surface treatment