摘要
本文研究了液相外延生长的不同掺Bi,N浓度GaP∶(Bi_7N)材料的低温光致荧光光谱,观察到了N谱线“猝灭”和Bi束缚激子发光增强的现象.这可以解释为束缚激子由等电子受主N向等电子施主Bi隧穿能量转移的结果.变激发密度下各中心发光强度的变化关系以及与GaP∶(Bi)材料的实验结果比较,为这一能量转移过程提供了进一步的论据.
The low temperature photoluminescence spectra of GaP:(Bi,N) crystals grown by LPEtechnique with different doping levels of Bi and N have been investigated The phenomena ofN-line intensity quenching and Bi-band intensity enhancing were observed.For qualitative in-terpretations of the above mentioned experimental results,it was tentatively proposed that energytransfer of bound exciton from isoelectronic acceptor N to isoelectronic donor Bi had occurredduring the excitation of GaP:(Bi, N).The luminescence intensity variation of various radia-tive centers with excitation levels in GaP:(Bi,N) when compared with those of GaP:(Bi) pro-vides further evidence for the energy transfer process.
基金
中国国家科学基金
关键词
磷化镓
等电子陷阱
光致发光
GaP
Isoelectronic trap
Bound exciton
Energy transfer
Photoluminescence
