MoSi_2硅化物的形成及电子结构的研究

Electronic Structure and Formation of MoSi_2 Silicide

利用XPS、UPS、AES、X-光衍射和拉曼散射等技术,研究了在稳态热退火条件下共溅射的Mo-Si合金膜,硅化物的形成及电子结构特性.

The properties of electronic structure and formations of MoSi_2 silicide prepared by co-sputtering Mo and Si atoms on silicon substrates under the condition of the steady thermal an-nealing are investigated with the techniques including XPS,UPS,AES,X-ray diffraction andRamman scattering spectroscopy.