摘要
本文用RBS,AES和电特性测量等方法,研究了ZrN/n-GaAs肖特基势垒.结果表明ZrN/GaAs势垒有良好的电特性和高温稳定性.经850℃高温退火后,势垒高度为0.90eV,理想因子n=1.02.同时我们观察到,随着退火温度升高(从500℃升高到850℃),ZrN/GaAs势垒电特性有明显改进:肖特基势垒高度增大、二极管反向电流减小、二极管电容减小和反向击穿电压增大.以上特点表明,ZrN/GaAs是用于自对准高速GaAs集成电路的较为理想的栅材料.
The characterization of ZrN/n-GaAs Schottky barriers are investigated using RBS,AESand electrical characteristics measurements.The results show that ZrN/n-GaAs Schottky bar-riers have excellent electrical characteristics and thermal stability.After annealing at 850℃,the corresponding barrier height of 0.90 eV and ideality factor of 1.02 are obtained.It is ob-served that with the increase of annealing temperature from 550℃ to 850℃,the electricalcharacteristics of ZrN/n-GaAs Schottky barriers are improved distinctly:an enhancement ofbarrier height,reduction of reverse leakage current, reduction of diode capacitance,and increaseof reverse breakdown voltage.Our study suggests that ZrN is promising for self-aligned GaAs,integrated circuits.
