摘要
文章报道了a-Si∶H在石英,SiO_2/Si,WSi_2/Si和Al/Si四种不同衬底上激光结合的结果.
The laser crystallization of a-Si:H on different substrates was carried out.High qualitycrystallized films have been obtained on fused quartz,but not on SiO_2/Si substrates because ofthe generation of bubbles and holes.For crystallization on WSi_2/Si, a higher power must besupplied and grain size is not large enough.On Al/Si,regular liquid crystallization can not beobtained up to the temperature of melting point of Al.
关键词
氢化非晶硅
激光结晶
热处理
Hydrogenated amorphous silicon
Laser crystallization
Hydrogen release
Thermal processing
