HEMT材料的电子辐射效应

ELECTRON IRRADIATION EFFECTS OF THE MATEREALS OF HEMT

用能量为１～１．８ＭｅＶ、注量为１０￣（１３）～１０￣（１０）／ｃｍ￣２的电子，对ＨＥＭＴ（高电子迁移率晶体管）材料进行辐照，得到了材料结构中的２维电子气（２ＤＥＧ）的电输运性质随辐照电子能量和注量的变化关系，井进行了讨论．还将该结果与电子辐照Ｐ－ＨＥＭＴ和ＬＴ－ＨＥＭＴ材料的结果进行了比较，对异质结界面的辐照效应进行了分析。

The materials of HEMT(high electronic mobility transistor) were irradiated by electronbeam with energy from 1 to 18 MeV and fluence from 1×10￣(13) to 1×10￣(17)/cm￣2 This materials weregrown by molecular beam epitaxy with the thin layer of two dimensional electronic gas (2DEG)located at about 700A bellows the surface. The change of the electrical transport behaviour of 2DEGdepended on the irradiating electron energy and fluence has been observed. Discussions were madeabout the results and also about the irradiation effects on the interface of heterostructure,