微晶硅膜MIS结构光位敏探测器的研制

THE STUDY AND PREPARATION OF LIGHT POSITION -SENSITIVE DETECTOR WITH STRUCTURE MADE FROM MICRO-CRYSTALLIZED SILICON FILMS

采用快速退火工艺，促使非晶硅膜固相晶化，获得了具备器件质量的微晶硅膜．以此晶化膜作基本材料，采取侧向光伏效应的工作模式，以金属－绝缘体－半导体（ＮＩＳ）结构成功地研制出了－维微晶硅膜的光位敏探测器．实验结果表明，该器件具有非晶硅器件与晶体硅器件互补兼容的特色．

The microcrystal silicon(μ C-Si)films suitable for making devices have been preparedthrough the quick annealing technique to turn the a-Si:H(Hydrogenated amorphous silicon)into theμ c-Si.Taking this film as the basic material l an one-dimensional μc-Si light position sensitive detector(PSDs)have been successfully produced with the MIS structure and working mode of lateral photo-voltaic effect.This detector has the advantage of both amosphous and crystal silicon devices.