摘要
本文通过引入两个共价因子N1、Ne推导了包含Racah参量A的能量矩阵。并用高阶微扰方法推导了g因子四阶微扰公式,在此基础上,计算了GaAs:C2+0的晶场光谱和顺磁g因子。其理论值和实验结果吻合较好。本文结果表明,对于半导体,Racah参量A对晶场光谱和g因子的贡献不可忽略。
Two covalent factors are introduced in this paper.Energy matrices of3d3/7,ion in Oh(Td)crgstal field and perturbation formulas up to fourth 2order for g factor,which include contribution from Racah Parameter A,are derived in terms of these fomulas,We calculate spectvnm and g factor of Co2+ in GaAs. The results agree with the experimental finding.For the semiconductor which has stronge covalency.It shows that the contribution from the Racah Paramater A to spectrum and g shifts can not be neglected.
出处
《四川轻化工学院学报》
1995年第4期102-107,共6页
Journal of Sichuan Institute of Light Industry and Chemical Technology