Si^+,Mg^+(隐埋)双注入GaAs MESFET

Si^+、Mg^+(Buried Layer) Double Implanted GaAs MESFET

比较了Si^+ 单注入和Si^+ 、Mg^+(隐埋)双注入GaAsMESFET的特性.实验表明,设置高能注入Mg^+隐埋层后,可大大消除衬底背景杂质对有源层的影响,容易制成性能优于Si^+单注入的GaAs E-和D-MESFET,并能提高阈值电压V_(tb)均匀性.

The characteristics of Si^+ implanted and Si^+, Mg^+ (buried layer) double implanted GaAsMESFET have been compared.The experimental results show that after a high energy Mg^+implantation (buried layer), the effects of substrate background impurities in active region canbe greatly reduced,GaAs E-and D-MESFET can easily be fabricated by double implantation andthe characteristics of which are much better than Si^+ single implantation.Besides, the unifor-mity of the device threshold V_(th) is improved.