优质氧化锌透明导电膜

HIGH QUALITY ZINC OXIDE TRANSPARENT CONDUCTIVE FILM

报道了采用反应电子束蒸发技术制备优质氧化锌透明导电膜的工艺和结果。典型的结果：电阻率低达２×１０－４Ω．ｃｍ，霍尔电子迁移率为５２ｃｍ２（Ｖｓ）－１，厚４０００×１０－１０ｍ膜的方块电阻为８．９Ω／□，可见光透过率大于９０％。分析了源掺杂、镀膜气氛、衬底温度等参数与膜的电导和透光特性的关系。

The processing technology and the results of high quality ZnO2 thin solid films prepared by active electron beam evaporation is reported. The typical properties of the film are the followings: resistivity as low as 2×10-Ω.cm. Hall electron mobility reaches 52 cm2 V-1. s-1. The sheet resistance of the film with thickness of 4×10-8cmis 8.9Ω/ The average transparency for visible light is higher than 90%. The dependence of conductivity and transparency of the films on doping of the source. atmosphereof the evaporating chamber, substrate temperature. etc. is analysed as well.