摘要
在卤素钨灯和弧光灯二种不同辐射热源的快速热工艺系统中用快速热工艺氧化法制备了超薄(20埃-400埃)的SiO_2薄膜.对快速热工艺氧化的生长动力学进行了研究并计算了氧化生长速率的温度激活能.对二种不同快速热工艺系统所得结果作了比较.本文还讨论了快速热工艺氧化中,温度骤变过程的氧化效应.最后,本文提出了“温度骤变(Temperature Ramp-only)快速热氧化”技术,该技术特别适于制备20埃到60埃的超薄SiO_2层.
Very thin oxides (20-400A) have been obtained in two rapid thermal processing systemswhich have different radiation sources: a tungsten-halogen system and a water-wall arclamp system.The growth kinetics of rapid thermal oxidation have been studied and the tem-perature activation energies for the oxidation growth rate have also been calculated.A com-parison of oxidation kinetics between two radiation source RTP system has been made, Theeffects of temperature ramping steps on growth kinetics have also been studied. Finally, a'Temperature Ramp-only' RTO technique for the growth of ultra-thin oxides (20-60A) is re-ported.
关键词
氧化硅
氧化法
激活能
薄膜生长
Oxidation
Silicon oxide
Activation energy
Kinetics
