少子MIS隧道结发射极晶体管场感应结模型

THE MODEL OF FIELD INDUCED JUNCTION ON MINORITY CARRIER MIS TUNNEL JUNCTION EMITTER TRANSISTOR

对少子ＭＩＳ隧道结发射极晶体管提出一种场感应结模型。以此模型为基础，导出该器件的ｈＦＥ与金属功函数及基区掺杂浓度的关系．所得结果与实验数据符合较好．

in this paper, a model of field induced junction on minority carrier MIS tunneljunction emitter transistors is proposed. on the basis of this model, an expression of hFE as a function of metal work function and base doping concentration has been derived. The theoretical results are in good agreement with the experimental results.