摘要
本文用半经验紧束缚法计算了ZnSe/GaAs(001)超晶格的能带结构,研究了其能隙与有效质量随层厚的变化.计算了(ZnSe)_5/(GaAs)_5超晶格中与杂质有关的芯态激子,其结果能说明相应异质结中束缚在Ga上的激子峰.本文还提出了该材料中导带底存在界面态.
The energy band-structures of superlattice ZnSe/GaAs (001) are calculated using semiem-pirical tight-binding method.The fundamental gap and effective mass are studied with thevariation of layer thickness.The core excitons related to impurity B, Al and Ga are obtainedin (ZnSe)_5/(GaAs)_5, some results of which are accountable for Ca-bound exciton peak observedin corresponding heterojunction experiment,it is proposed that interface states would exist inthis material.
关键词
超晶格
能带结构
芯态激子
硒化锌
ZnSe/GaAs
Superlattice
Fundamental gap
Energy band structures
Interface states
Effective mass
Core exciton
