摘要
本文介绍了一种硅双模预置分频器（÷４０／４２）的电路原理、电路设计、版图设计、工艺技术及研制结果。采用３μｍ设计规则的硅双极型ｐｎ结对通隔离工艺、薄层外延和泡发射极等ＥＣＬ高速电路制作技术，双模预置分频器最高工作频率在－５５℃～＋１２５℃环境温度范围内达１３００ＭＨｚ以上，并且具有输入动态范围大、电源电压宽等特点。
A silicon dual-modulus prescalar IC(÷40/42)is described in regard to its principle,the circuit and layout design and the process technology,The device is fabricated using 3-μm Sibipolar process. A maximum operating frequency of 1300MHz has been obtained at -55℃～+125℃,It features a large input dynamic range and wide supply voltage range.
出处
《微电子学》
CAS
CSCD
1995年第3期5-9,13,共6页
Microelectronics
