摘要
本文阐述了浮栅ＥＥＰＲＯＭ存贮单元的工作原理及图形设计的方法考虑。比较和分析了四种不同的单元图形的利弊得失以及ＥＥＰＲＯＭ中低掺杂漏区（ＬＤＤ）结构的图形与工艺技术。
The principle of memory cells in a FLOTOX-EEPROM is described in the paper. Techniques to design patterns of the memory cell are introduced. The advantages and disadvan-tages of four different cell patterns are compared and analyzed. The structure of low draln doping for EEPROM's is also discussed as well as the technique for LDD.
出处
《微电子学》
CAS
CSCD
1995年第5期54-58,共5页
Microelectronics
基金
国家微电子材料与元器件微分析中心资助
