摘要
研究了深能级中心电场增强载流子产生现象,得到的产生电流与产生宽度的理论关系,能较好地与实验结果相符合。
The effect of field- enhanced carrier generatioin in deep-level centers is studied.Theo-retically,the relation between generation-current and generation-width is derived,which is in good agreement with experimental results.
出处
《微电子学》
CAS
CSCD
1995年第6期56-58,共3页
Microelectronics
基金
硅材料国家重点实验室资助项目