摘要
注氧隔离的ＳＩＭＯＸ技术是获得ＳＯＩ材料的最先进的技术，本文讨论了ＳＩＭＯＸ技术的研究进展，比较了ＳＩＭＯＸ和ＳＩＭＮＩ两种材料的优缺点。
Separation by implantation of oxygen(SIMOX) is most advanced technology for achieving silicon-on insulator (SOI) material. This discusssion presents an overview of the progress of SIMOX technology. The strengths and weaknesses of the two materials SIMOX and SIMNI are considered.
出处
《微电子学与计算机》
CSCD
北大核心
1995年第2期6-9,共4页
Microelectronics & Computer
