摘要
对条栅ＣＭＯＳ／ＳＩＭＯＸ例相器在不同偏置条件下进行了６０Ｃｏγ射线的总剂量辐照试验，比较研究了ＰＭＯＳ、ＮＭＯＳ对倒相器功能的影响，发现ＮＭＯＳ抗总剂量辐照性能比ＰＭＯＳ差，主要是ＮＭＯＳ引起器件功能的失效。
Total dose lrradlatlon effects ofllnear gate CMOS/SIMOX inverters were measured by 60Co γ my undnr different bias conditions during irradiation.The affection of the radiation characteristics of PMOS ad NMOS to inverter function was compared. It shows that the total dOSe radiation tolerance of NMOS is inferior to mat of PMOS. It is NMOS who fail the device function chiefly.
出处
《微电子学与计算机》
CSCD
北大核心
1995年第2期37-39,43,共4页
Microelectronics & Computer
