介质隔离技术的新进展

New Development of Dielectrically Isolated Technology

本文介绍一种成品率高，而实现全介质隔离的ＳＯＩ技术。该技术利用助粘层对硅片进行粘合，实现以单晶硅取代ＳｉＯ２─多晶硅介质隔离片中的多晶硅支撑体，避免了长时间高温淀积多晶硅过程，从而克服了随硅片直径增加而加剧的硅片翘曲形变，简化了操作，缩短了工艺流程，便于批量加工，适用于大直径硅片，其成品率亦比ＳｉＯ２─多晶硅介质隔离高出５０％，并在双极型模拟电路抗辐照加固的实际试用中取得了成品率高、电参数一致性好的满意结果。

A new structure of silicon-on-insulator (SOI) to realize total dielectrical isolation is described in this pger.The technique uses the wafer-bonding method to rep18ce the traditional SiO2-poly-Si dielectncally isdated technology.A thin layer that aids to be“adhered” is deposited on a wafer before bodedto another one which takes the place of the thick poly-Si “handle” in old dielectrlcally isolated process.The long-time deposition of poly-Si at a high temperature has been avoid with the result that the bending ofwafers with the enlargement of their diameters have been lessened.This new technology has been applied to fabricate bipolar circuits and radiation harden circuits. Higher yield and betier electric parameter has been obtained.