Al栅BESOI／CMOS器件的辐照特性

Radiation Caracteristics of Aluminum Gate BESOI/CMOS Devices

在表层硅厚度约６μｍＢＥＳＯＩ材料上，制备了Ａｌ栅ＣＭＯＳ器件。实验样品消除了纵向寄生结构和困扰ＳＯＩ薄膜器件的背沟效应、边缘效应、Ｋｉｎｋ效应。样品未作抗辐照工艺加固，γ累积辐辐照剂量已达３×１０５ｒａｄ（Ｓｉ）。实验表明，该结构埋层ＳｉＯ２的存在对器件的辐照性能影响不明显。

Aluminum gate CMOS devices have been fabricated on the BESOI material with approximate 6μm superficial silicon thickness. The vertical parasitic structures of the experimental samples have been eliminated and so do the back-channel, lateral and Kink effects which are perplexed in thin film SOI devices. The devices hard to 3×105 rad (Si) gamma ray irradiation have been obtained without special radiation hardening process. The experiment shows that the existence of buried oxide does not affect the devices radiation characteristics significantly.