高剂量离子注入的物理效应与计算机模拟

Physical Effects of High Dose Ion Implantation and Its Computer Simulation

本文报告了硅中注入大剂量Ｏ＋或Ｎ＋离子形成ＳＩＭＯＸ或ＳＩＭＮＩ的物理效应及计算机模拟结果；分析了ＳＩＭＯＸ与ＳＩＭＮＩ形成的不同机制．在注氧形成ＳＩＭＯＸ结构的计算机模拟程序的基础上发展了注氮形成ＳＩＭＮＩ结构的动态模拟程序。实验与模拟结果符合很好，验证了现有的理论模型和程序所作的假设。多次注入与退火会减小ＳＩＭＯＸ上层硅厚度，而增大ＳＩＭＮＩ的上层硅厚度。低能注入可以获得良好的ＳＯＩ材料，而且可以降低注入剂量。

Physical Effects and computer simulation of implantation of O+ or N+ ions into silicon forming SIMOX and SIMNI structures have been reported. The simulation program for SIMOX has been modified in order to be applied in N+ implantation on the basis of different formation mechanism between SIMOX and SIMNI structures. There is good agreement between experiment and simulation results verifying the theoretical model and presumption in the program. Sequential implantationand annealing will reduce the thickness of top silicon layer of SIMOX but has reverse effect on SIMNI structure. Good crystal quality can be achieved by low energy implantation, in the same time, implantation dose can be decreased.