自对准硅化物SOI／CMOS技术研究

Self-Aligned Silicide Technology for SOI MOSFET’s

在ＳＯＩ／ＣＭＯＳ电路制作中引入了自对准钴（Ｃｏ）硅化物（ＳＡＬＩＣＩＤＥ）技术，研究了ＳＡＬＩＣＩＤＥ工艺对ＳＯＩ／ＭＯＳＦＥＴ单管特性和ＳＯＩ／ＣＭＯＳ电路速度性能的影响。实．验表明，ＳＡＬＩＣＩＤＥ技术能有效地减小ＭＯＳＦＥＴ栅、源、漏电极的寄生接触电阻和薄层电阻，改善单管的输出特性，降低ＳＯＩ／ＣＭＯＳ环振电路门延迟时间．提高ＳＯＩ／ＣＭＯＳ电路的速度特性。

The CoSi2 self-aligned silicide (SALICIDE) process for CMOS circuits on silicon insulator(SOI) has been developed with Co rapid thermal processing technology. SALICIDE process's influences on MOSFET's and CMOS circuits characterisitics are studied. The experimental results show that by using SALICIDE process, the MOSFET's contact resistance has been greatly decreased, thus output characterisitics are improved. CMOS ring oscillator with a gate length of 1 μm can operate at high speed with the delay time/stage of 230ps/stage at 5V.