摘要
对注S-SI GaAs单晶作光致发光测试,确定了两个缺陷能级.1.239eV峰可能是镓空位(V_(Ga))与S的络合物;1.408eV峰是由注S引起SI-GaAs衬底中残留杂质Si发生迁移,增加了Si受主(Si_(As))密度,部份Si_(As)与砷空位(V_(As))相互作用形成V_(As)-Si_(As)络合物而产生的.
The photoluminescence (PL) measurements have been carried out on heavily S implantedsemi-insulating GaAs.Two defect energy levels,with the peaks at 1.239eV and 1.408eV, areobserved.The 1.408eV peak is ascribed to V_(As)Si_(As). The formation of this complex is analys-ed in terms of the transformation of Si_(Ga) to Si_(At), which further combines with V_(As) during annealing.nealing.
