摘要
本文根据热力学成核理论，研究了Ｓｉ衬底表面气功生长金刚石薄膜的成核机理，提出了与实验相符的理论分析。
The mechanism of diamond nucleation on Si substrates have been studied ,based on the thermodynamics nucleation theory and a model of diamond nucle-ation on Si substrates has been put forward,which is identical with the experi-ments.
出处
《微细加工技术》
1995年第2期56-59,共4页
Microfabrication Technology
