摘要
利用热丝化学气相沉积法，以硼酸三甲酯为液态掺杂源，用Ｈ＿２携带，制备出高质量的ｐ型金刚石薄膜。经检测，其晶体结构常数与天然金刚石十分接近。对掺杂样品计算表明，硼掺杂浓度是６．５×１０￣（１９）ｃｍ￣（－３）室温下空穴载流子浓度是８×１０￣（１６）ｃｍ￣（－３），电离率为１．２３／１０００。
The p -type semiconducting diamond films have been prepared by hot fila-ment chemical vapor deposition(CVD) method on the Si substrate. The trimethylborate is taken as doping source of liquid state and H_2 as carrier, The crystalstructure and lattice spacing of samples are the same as that of natural cubic dia-mond.Calculating for the sample shows that the boron doped concentration in di-amond films is 6. 5×10￣(19)cm￣(-3);the carrier concentration of holes at room temper-ature is 8×10￣(16)cm￣(-3); the ionization rate of holes at room temperature is 1. 23/1000.
出处
《微细加工技术》
1995年第2期51-55,共5页
Microfabrication Technology
关键词
金刚石薄膜
半导体
制备
掺杂
半导体材料
p-type diamond films
boron doping
semicoductor prepara-tion
