CMOS／BESOI电特性的温度依赖性研究

STUDY ON TEMPERATURE-DEPENDENT ELECTRIC CHARACTERISTICS OF CMOS/BESOIOEVICES

采用Ｉ－Ｖ测试技术，研究了ＣＭＯＳ／ＢＥＳＯＩ器件的Ｉ－Ｖ亚阈特性与温度的关系。结果表明，随着温度的升高，Ｉ－Ｖ曲线的亚阈斜率减小，且阈电压漂移增加。

The relation between temperature and subthreshold characteristics of I-Vcurves ofCMOS/BESOI device were measured with I-V technique.It’s con-cluded that the subthreshold slope of I-V curve is decreasing with raising oftemperature and the drift of thresliold voltage is increasing.