氢原子侵蚀作用的研究

INVESTIGATION ON ATOMIC HYDROGEN ETCHING IN FILAMENT-ASSISTED CVD DIAMOND FILMS

通过热力学计算和动力学分析，研究了热丝ＣＶＤ金刚石薄膜沉积过程中，氢原子对石墨相和金刚石相的侵蚀作用。结果表明：当衬底温度在８２３Ｋ～１２７３Ｋ间变化时，氢原子和石墨相反应的表观活化能小于氢原子和金刚石相反应的表观活化能．这是氢原子更易侵蚀石墨相的原因所在。

Based on thermodynamic calculation and kinetic analyses, the etching effectof hydrogen atom to graphite and diamond phases duririg the deposition processof diamond films by filament-assisted CVD have been investigated. The calcula- tion and experimental results show that the etch rate of active H to graphitic car-bon phase is higher then that to diamond phase when the substrate temperatureis from 823K to 1273K. The fundamental reason lies in the apparent activationenergy of reactions between hydrogen atom and graphitic phase is smaller thanbetween hydrogen atom and diamond phase.