摘要
采用安装Ｃ靶（４．４７ｎｍ）的Ｈｅｎｋｅ源进行了ＤＣＰＡ胶的Ｘ光曝光实验，经持续曝光，得到了与５０线／ｍｍ铜网掩模对应的光刻图形。结合正比计数管的Ｘ光测量，得到ＤＣＰＡ胶对Ｃ靶的曝光灵敏度为～３５ｍＪ／ｃｍ￣２。
The exposure experiments for the DCPA resist were carried out using aHenke-type X-ray source with a Carbon target(4.47nm).The etch pattern cor-responding to a 50 grooves/mm Cu net mask were obtained by continuous expo-sure. It shows that the sensitivity of the DCPA resist for a Carbon target is～35mJ /cm￣2,measuring with a proportional counter tube.
出处
《微细加工技术》
1995年第4期11-14,共4页
Microfabrication Technology
