摘要
本文采用浅平面结制作场板结构高压器件。根据二维模拟器件击穿电压分析结果选择器件参数：结深，场氧化层厚度，场板宽度和内部电极间距。实测结果，半绝缘钝化结构击穿电压的计算值与实验值相差较大，而绝缘层钝化结构的两者较接近。
The high-voltage device with field plate structures have been fabricated byshallow planar junction based on the two-dimensional simulation analysis resultsof the breakdown voltage the following parameters of the device are selected:junction depth,field oxide thickness, field plate width and inner-electrodes spa-cing.The measurement results indicate that the diffrence between the calculated data and the experimental data of breakdown voltage of the semi-insulation pas-sivatlon structure is very large,but the two datas for the dielectric passivation structures are near.
出处
《微细加工技术》
1995年第4期15-20,共6页
Microfabrication Technology
关键词
浅平面结
场板结构
高压器件
集成电路
shallow planar junction
field plate strunture
passivation
