SiH_4／C_2H_4体系激光合成SiC超细粉

Laser Synthesis of SiC Ultrafine Powders from SiH_4/C_2H_4 System

本文报道了ＳｉＨ４／Ｃ２Ｈ４体系激光合成ＳｉＣ超细粉研究及对合成的ＳｉＣ超细粉进行的ＴＥＭ（ＴＥＤ）、ＸＲＤ、ＦＴＩＲ、ＸＰＳ及Ｒａｍａｎ散射等测试分析．在部分样品中发现了ＳｉＣ空心颗粒．讨论了ＳｉＣ超细粉的成核成长规律，得出了一些有价值的新结果：ＳｉＣ超细粉的合成由Ｓｉ成核生长和碳化组成，反应温度较高时，为获得接近化学计量比的ＳｉＣ超细粉，要求有较高的源气Ｃ／Ｓｉ比，并且高的Ｃ／Ｓｉ比有利于降低粉体的氧含量．

Laser synthesis of SiC ultrafine powders from SiH4/C2H4 and characterization of the samples by TEM(TED), XRD, FTIR, XPS and Raman scatter were reported in the paper. SiC hollow particles were formed in some samples. The synthesis process was discussed in detail, and some new results evaluated:The synthesis of SiC powders consisted of the prior nucleation and growth of silicon and the succeeding carbonization, higher C/Si ratio in the source was necessary to synthesize near stoichiometric SiC powders when reaction temperatur became higher, and it also favored to lower contamination of oxygen.