摘要
测量了不同Bi_(2)Sr_(2)CuO_(7)单晶样品ab平面内电阻ρ_(ab)随温度的变化关系.对于处在掺杂不足区域的样品,没有观察到类似于YBa_2Cu_4O_8,YBa_2Cu_3O_(r-y)体系由于自旋能隙的出现而引起的电阻率的突然加快减小现象.我们对实验结果进行了讨论.
The in-plane resistivity ρab as a function of temperature of Bi2Sr2CuOy crystals was measured. For the crystals in the underdoped region, we did not observe an-accelerated decrease in ρab with decreasing temperature as appeared in YBa2Cu O8, YBa2Cu3O7-y systems whinh was explained as the resutt of development of spin gap. A discussion of experimental results is presented.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第1期128-132,共5页
Acta Physica Sinica
基金
国家超导技术联合研究开发中心基金
中国科学院院长基金资助的课题.
