亚稳态γ-Mn与GaAs(100)界面的形成:扩散和化学反应

FORMATION OF THE META-STABLE γ-Mn ANDGaAs(100) INTERFACE: DIFFUSION ANDCHEMICAL REACTION

利用低能电子衍射、电子能量损失谱和X射线电子能谱,对亚稳态了γ-Mn在清洁、有序的GaAs(100)表面的淀积过程进行了研究.研究结果表明,淀积初期锰的生长是层状的.在生长过程中界面发生互混井伴随着Mn与衬底间的化学反应.我们用一简单的模型对上述过程进行了理论计算,得到的结果与实验基本吻合.这对于进一步理解亚稳态γ-Mn的形成机理具有重要意义.

The interface formation between meta-stable γ-phase manganese and GaAs(100) substrate was investigated by low energy electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. The experimental results show that Mn grows in layer-by-layer mode at early stage. While the interface is smeared by the intermixing of Mn and substrate, the exchange chemical reaction happens between them. A simple model has been proposed to describe the atomic density distribution of Ga in Mn overlayer, which shows good agreement with experimental results.