InGaAsP半导体激光器中的近简并四波混频

NEARLY DEGENERATE FOUR-WAVE MIXING IN InGaAsP SEMICONDUCTOR LASERS

对InGaAsP半导体激活层中的近简并四波混频进行了理论分析和数值计算.实验观察了在工作波长为1.53μm的InGaAsP分布反馈(DFB)半导体激光器和外色散腔(EDC)半导体激光器中的近简并回波混频.观察到了透射增益对频率失谐的明显的不对称性.实验结果证实了载流子寿命应为～200—300ps.

Nearly degenerate four-wave mixing in InGaAsP semiconductor active layers is analyzed and calculated. The phenomena in a InGaAsP distributed feedback (DFB) semiconductor laser and that in a InGaAsP external dispersive cavity (EDC) semiconductor laser are investigated experimentally. Asymmetries of transmitted gains virsus frequency detuning are demonstrated. It is proved by the experimental result that the carrier lifetime sould be-200-300ps.