^(28)Si_n^-(n=1,2)离子对Ag表面的溅射研究

SPUTTERING ON Ag SURFACE BOMBARDED BY ^(28)Si_n(n = l,2)

用原子捕获膜技术结合卢瑟福背散射谱,测定了具有相同原子能量(16keV/原子)的^(25)Si_m^-(n=1,2)离子冲击Ag靶的溅射原子角分布。结果表明,^(26)Si_1^-冲击引起的Ag原子角分布较^(25)Si_2^-冲击在小发射角θ(Ag原子发射方向与靶表面法线方向之间的夹角)区有更大的增强。结合扫描电子显微镜对靶点表面的分析,我们认为这种角分布变化,可能暗示必须考虑靶点表面形貌特征差别的影响。

The angular distribution of sputtered atoms of Ag target bombarded by28 Sin-n= 1,2) is measured using collection film technique combined bwith Rutherford backsc-attering spectroscopy. The experimental results show that the angular distribution of Ag atom induced by 28Si1- is enhanced as compared with that by 28Si1- in small eje-cting angle θ. Combined with the analysis of target surface examined by scanning electron microscopy, we consider that this change of angular distributions may be indicate the influence of target surface topographical features.