摘要
以文献[10]中作者系统研究离子注入Si中缺陷形成判据为基础,研究多种高能重离子的注入和退火行为,提出一种简便和有效抑制二次缺陷形成的新方法.
Based on the author's study of criterion for the formation of defects in ion implanted silicon in Ref. [10], the annealing behavior of damage and defect in silicon implanted with different kinds of high mass MeV ions has been investigated. A new method which is a simple and valid way to suppress the formation of secondary defects is proposed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第7期1101-1107,共7页
Acta Physica Sinica
基金
国家自然科学基金资助的课题.
