CaAs(100)的(NH_4)_2S_x和P_2S_5/(NH_4)_2S_x表面钝化

SURFACE PASSIVATION EFFECTS OF GaAs WITH (NH_4)_2S_x and P_2S_5/(NH_4)_2S_x

利用光致发光谱、X射线光电子谱和俄歇电子谱等技术研究了(NH_4)_2S_x和P_2S_5/(NH_4)_2S_5化学钝化GaAs(100)表面.结果表明,(NH_4)_2S_x中S钝化可以完全去除GaAs表面的氧化物.P_2S_5/(NH_4)_2S_x中P_2S_5对降低G_2A_5表面态密度,提高光致发光强度是有效的.钝化表面P氧化物存在对防止GaAs表面初期氧化起重要作用.

Using photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy, we have analysed GaAs (100) sarfaces passivated with (NH4)2Sx and P2S5/(NH4)2Sx.Sulfar passivation using (NH4)2Sx is extremely efficient in complete removal of the oxides of GaAs. P2S5 passivation using P2S5/(NH4)2S3 is confirmed to be effective in chemically passivating the GaAs surface. The results show that presence of phosphoras on sulfar passivated surface appeans to play a significant role in the resistance of the surface to ambient oxidation.