双电子复合过程的相对论理论研究　通道的变化特性

RELATIVISTIC THEORETICAL STUDY ON DIELECTRONIC RECOMBINATION PROCESS

双电子复合是一种共振辐射复合过程,在这一过程中,一个具有特定能量的自由电子与电离度为q的离子A^(+q)碰撞,形成有两个电子激发的自电离态n_(?)l_(?)nl,该自电离态进一步发射光子,复合成A^(+(q-1))离子,一系列n(?)l_(?)nl自电离态(n_(?)l_(?)l固定,n从有限到无限变化)形成一个通道,本文在相对论单组态理论基础上,具体探讨了类氦铁离子(3s_(1/2)~nP_(1/2))J=(?)通道中,双电子复合速率随n的变化规律,根据本文得到的规律,可以很方便地计算任意离子的任意一个双电子复合过程.

Dielectronic recombination may be regarded as a resonance radiative recombination process. In the process, an incident free electron with given kinetic energy collision with a ion A+q with charge +q, the free electron excited an bound electron of the ion A+q into nl state, and at the same time, itself be captured into another bound state nl, and a resonance doubly excited state will be formed. Furthermore, the state can be stable through radiative photons into some lower states. In this paper, we study the variation of Auger transition rates, radiative transition rates and dielectronic recombination rates with n in (1s1/2εp1/2)- (3s1/2np1/2)0- (n1 l1j1n2l2j2)1 recombination process using relativistic single configuration approximation method. From the method and program set up in this paper, any dielectronic recombination process for any ion can be calculated conveniently.